| PART |
Description |
Maker |
| LTC1263 LTC1263CS8 1263F |
12V/ 60mA Flash Memory Programming Supply
12V, 60mA Flash Memory Programming Supply
From old datasheet system
|
Linear Technology
|
| LTC1262-15 |
12V, 30mA Flash Memory Programming Supply
|
Linear Technology
|
| BL8052 |
12V, 30mA Flash Memory Programming Supply
|
SHANGHAI BELLING CO., L...
|
| SDIN2C2-2G |
Host independence from details of erasing and programming flash memory
|
Sanken electric
|
| SX28AC SX20AC100-I_DP SX20AC100-I_PQ SX20AC100-I_S |
Configurable Communications Controllers with EE/Flash Program Memory In-System Programming Capability and On-Chip Debug
Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability and On-Chip Debug
|
ETC[ETC]
|
| MAX662A |
12V, 30mA Flash Memory Programming Supply(12V,30mA快擦写存储器编程电源,电荷泵电压转换器) 12V30mA闪存存储器编程电
|
Maxim Integrated Products, Inc.
|
| ATMEGA8515 ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 16 MIPS throughput at 16 Mhz.
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|
| ATMEGA48 ATMEGA168 ATMEGA88 |
4K byte self-programming Flash Program Memory, 512 byte SRAM, 256 Byte EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega48V).
16K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega168V).
8K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega88V).
|
Atmel
|
| AN1179 |
ST7 - PROGRAMMING ST7 FLASH MICROCONTROLLERS IN REMOTE ISP MODE (IN-SITU PROGRAMMING)
|
SGS Thomson Microelectronics
|
| CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory
70ns 1M-bit CMOS flash memory
55ns 1M-bit CMOS flash memory
45ns 1M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
